Doering Jahresbericht Update

diff --git a/GSI_2015_Doering/Doering-Mi34-GSIbericht2014.tex b/GSI_2015_Doering/Doering-Mi34-GSIbericht2014.tex
index c42eb00980c5898dbf73f8ba4bdf58d0637e3f39..601c1a01c968712e4f8979b46ef6f8428aba4e31 100644 (file)
--- a/GSI_2015_Doering/Doering-Mi34-GSIbericht2014.tex
+++ b/GSI_2015_Doering/Doering-Mi34-GSIbericht2014.tex
@@ -1,4 +1,4 @@
-\documentclass{JACoW-GSI-2013}
+\documentclass{JACoW-GSI-2014}
 \usepackage{graphicx}
 \usepackage{url}
 \usepackage{amssymb}
@@ -41,21 +41,18 @@
 
 %\section{Introduction}
 Modern 0.18 $\upmu$m CMOS processes provide numerous features, which may allow for decisive progresses in the read-out speed and the radiation tolerance of the CMOS Monolithic Active Pixel Sensors (MAPS) to be used in the Micro-Vertex-Detector of CBM. Together with the PICSEL group of IPHC Strasbourg, we aim to exploit those features by migrating the successful architecture of our sensors toward this novel technology. This work reports about our findings on the first prototypes manufactured with the new technology.\newline
-A weak point of CMOS sensors is the slow diffusion of signal charge in the undepleted active medium. A sufficient radiation hardness was only achievable with very small pixels, which do not provide the required readout speed. A few years ago, this obstacle was alleviated by the upcoming availability of CMOS processes providing a high-resistivity epitaxial layer of $1~\rm k\Omega cm$. It could be demonstrated that this increases the non-ionizing radiation hardness by more than one order of magnitude. Therefore pixels of this high-resistivity AMS-0.35-process having a pitch of $20-30\mum$ achieved a non-ionizing radiation hardness in the order of $10^{13}\neqcm$ \cite{RESMDD2012}. Using this technology, the first vertex detector based on CMOS sensors is taking data in the heavy-ion experiment STAR since 2014.\newline   
-Achieving the required non-ionizing radiation hardness, the ionizing radiation hardness and read-out speed of sensors in the AMS-0.35-process was not sufficient for the application in the vertex detectors of ALICE and CBM. Therefore, a novel $0.18\mum$ process was exploited providing a higher tolerance to ionizing radiation due to its deep sub-micron process \cite{IWORID2013}. The smaller feature size allows in addition the integration of a more complex logic into the pixel providing a faster read-out.
- An additional feature of this process is the use of very high resistivity epitaxial layers up to $6~\rm k\Omega cm$. It was expected, that this improves the non-ionizing hardness to relax on the pixel pitch issue. \newline
+A weak point of CMOS sensors is the slow diffusion of signal charge in the undepleted active medium. A sufficient radiation hardness was only achievable with very small pixels, which do not provide the required readout speed. A few years ago, this obstacle was alleviated by the upcoming availability of CMOS processes providing a high-resistivity epitaxial layer of $1~\rm k\Omega cm$. It could be demonstrated that this increases the non-ionizing radiation hardness by more than one order of magnitude. Therefore pixels of this high-resistivity AMS-0.35-process having a pitch of $20-30\mum$ achieved the design goal of a non-ionizing radiation hardness in the order of $10^{13}\neqcm$ \cite{RESMDD2012}.\newline
+Using this technology, a first vertex detector based on CMOS sensors is taking data in the heavy-ion experiment STAR since 2014.\newline   
+Achieving the required non-ionizing radiation hardness, the ionizing radiation hardness and read-out speed of sensors in the AMS-0.35-process was not sufficient for the application in the vertex detectors of ALICE and CBM. Therefore, a novel $0.18\mum$ process was exploited and found to provide a higher tolerance to ionizing radiation \cite{IWORID2013}. Moreover, the smaller feature size allows for the integration of a more complex logic into the pixel providing a faster read-out.
+ An additional feature of this process is the use of very high resistivity epitaxial layers up to $6~\rm k\Omega cm$. It was expected, that this would improve the non-ionizing hardness further, which would allow for larger pixels and therefore for a faster sensor readout.\newline
 \begin{figure}
 \centering
 \includegraphics[width=0.5\textwidth]{Mi34Fe55LargePixel.pdf}
 \caption{Signal response to photons after a radiation dose of $10^{13}\neqcm$}
 \label{fig:Mi34Fe55LargePixel}
 \end{figure}
-The prototype sensor MIMOSA-34 was designed and tested after a radiation dose of $10^{13}\neqcm$. It provides elongated pixels with a pixel pitch of $22\mum \times 33\mum$ up to $33\mum \times 66\mum$. Figure \ref{fig:Mi34Fe55LargePixel} shows the response to photons of an Fe-55-source of the largest pixel, which operates very well after irradiation. The average CCE of the seed pixels shrinks by 9\% CCE, the CCE of the whole cluster, which is more sensitive to the recombination rate, decreases by 35\% CCE. The signal to noise ratio, measured with a Sr-90-$\beta$-source, lowers from 49 to 35. Comparing with sensors from beam tests, this value is sufficient to achieve an excellent detection efficiency. \newline
-In conclusion, the TOWER-0.18 process allows to operate CMOS sensors despite of a radiation dose of $10^{13}\neqcm$, which is required. This radiation hardness holds also for very large pixels up to $33\mum \times 66\mum$. Therefore, the main constraint of a sufficient non-ionizing radiation hardness to use very small pixels vanished. However, a spatial resolution of $5\mum$ in a binary read-out can only be reached with pixels in the order of $20-30\mum$ which now dictates the dimensions of the pixel pitch. However, larger pixels are an option for the outer stations, which do not require the highest spatial resolution. This allows to gain in read-out speed and to lower the power consumption. Last is in particular required for the outer layers of the ALICE vertex detector. \newline
-
-
-%We conclude that the lower feature size of the $0.18 \mum$-process under study cannot be fully exploited to reduce the capacitive noise of the pixels. This is as the smaller transistors show an RTS-1/f noise, which dominates the capacitive noise. Knowing this effect, it should be possible to reduce the noise of the above presented sensors by means of optimizing the layout of the few relevant transistors.\newline
-%This work is part of a proceeding paper to the IWORID conference 2013 in Paris, which was sent to editorial office in December 2013.\newline 
+To test this assumption, the prototype sensor MIMOSA-34 was designed, irradiated to $10^{13}\neqcm$ and tested hereafter. The sensor provides elongated pixels with a pixel pitch between $22\mum \times 33\mum$ and $33\mum \times 66\mum$. Figure \ref{fig:Mi34Fe55LargePixel} shows the response to photons of an Fe-55-source of the largest pixel. Its charge collection efficiency is reduced by radiation damage from 34\% to 25\% for the seed pixel and from close to 100\% to 62\% for the charge of the full cluster. The signal to noise ratio, as measured with a Sr-90-$\beta$-source, decreases from 49 to 35. According to our experience with other sensors, this signal to noise ratio is sufficient to provide an excellent detection efficiency. \newline
+In conclusion, the novel process is likely to provide a tolerance to $10^{13}\neqcm$ as needed for CBM even in combination with a $33\mum \times 66\mum$ pixel pitch. Consequently, this pitch seems now limited by the need for matching a spatial resolution of $5\mum$ rather than by the radiation tolerance. The latter allows for increasing the pixel pitch of the vertex detector, which comes with significant advantages in terms of readout speed and reduced power consumption.\newline 
 
 \bibliographystyle{plain}
 \bibliography{Lit}

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diff --git a/GSI_2015_Doering/Linnik-FSBB-GSIbericht2014.tex b/GSI_2015_Doering/Linnik-FSBB-GSIbericht2014.tex
deleted file mode 100644 (file)
index 2b53416..0000000
--- a/GSI_2015_Doering/Linnik-FSBB-GSIbericht2014.tex
+++ /dev/null
@@ -1,62 +0,0 @@
-\documentclass{JACoW-GSI-2013}
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-\title{The first full-integrated sensor FSBB manufactured in the 0.18$\upmu$m CMOS process\thanks{This work has been supported by BMBF (05P12RFFC7), HIC for FAIR and GSI.}}
-\author[1]{B. Linnik}
-
-%\author[2]{J. Baudot}
-\author[1]{M. Deveaux}
-%\author[2]{M. Goffe}
-\author[1]{D. Doering}
-%\author[2]{S. Senyukov}
-\author[ ]{J. Stroth\textsuperscript{\normalfont 1,2} for the CBM-MVD collaboration}
-
-%\author[2]{M. Winter}
-%\affil{Institut f\"ur Kernphysik, Goethe University Frankfurt, Germany and IPHC Strasbourg, France}
-%\affil{IPHC Strasbourg, 23 Rue du Loess, 67037 Strasbourg, France}
-\affil[1]{Institut f\"ur Kernphysik, Goethe University Frankfurt, Germany}
-%\affil[2]{IPHC Strasbourg, France}
-\affil[2]{GSI Darmstadt, Germany}
-%\affil[mun]{Forschungsneutronenquelle Heinz-Maier-Leibnitz (FRM II), Technical University Munich, Lichtenbergstr. 1,
-%85747 Garching, Germany}
-\maketitle
-%\hbox{}
-%\hbox{ }
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-%\section{Introduction}
-\textbf{Modern 0.18 $\upmu$m CMOS processes provide numerous features, which allow for decisive progresses in the read-out speed and the radiation tolerance of the CMOS Monolithic Active Pixel Sensors (MAPS) to be used in the Micro-Vertex-Detector of CBM. In the last years, we exploited this novel technology together with the PICSEL group of IPHC Strasbourg. The results from the first prototypes, testing the components separately, were very promising \cite{IWORID2013}. Therefore we designed and tested in 2014 the first full-integrated sensor FSBB.}\newline
-The FSBB combines the analogue pixel matrix together with a chip computer at the periphery, which provides discrimination and zero suppression on the basis of the SUZE-2 chip. The FSBB chip provides four matrices with different diode transistor dimensions to evaluate their design. They have 208 discriminators connected to 80k $22\mum \times 33\mum$ large pixels. The read-out provides a normal operation mode with zero-suppression and a data output of $640~\rm Mb/s$. The chip provides also different test modes for the analog and digital part to characterize the pixels and the discriminators. \newline
-\begin{figure}
-\centering
-\includegraphics[width=0.5\textwidth]{Mi34Fe55LargePixel.pdf}
-\caption{Signal response to photons after a radiation dose of $10^{13}\neqcm$}
-\label{fig:Mi34Fe55LargePixel}
-\end{figure}
-A comprehensive test campaign was performed in July 2014. The sensor was qualified via S-curve measurements. The analogue and digital part were tested separately and afterwards working together. The analogue part works quite well as expected (see figure XXX). However, turning on the digital part, it shows a non-uniform noise distribution. It seems to be a large cross talk contribution. Therefore it was decided to review the SUZE-2 chip from the scratch. Further FSBB prototypes with an improved zero suppression chip SUZE-3 are expected back from foundary in 2015. 
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