From: Dennis Doering Date: Thu, 9 Jan 2014 15:32:37 +0000 (+0100) Subject: Jahresbericht 2013 Init X-Git-Url: https://jspc29.x-matter.uni-frankfurt.de/git/?a=commitdiff_plain;h=3801431bb542e77e872ad8a3a43255e320cb1b4e;p=radhard.git Jahresbericht 2013 Init --- diff --git a/Jahresbericht2013/Doering-Mi34-GSIbericht2013.tex b/Jahresbericht2013/Doering-Mi34-GSIbericht2013.tex new file mode 100644 index 0000000..1c35719 --- /dev/null +++ b/Jahresbericht2013/Doering-Mi34-GSIbericht2013.tex @@ -0,0 +1,79 @@ +\documentclass{JACoW-GSI-2010} +\usepackage{graphicx} +\usepackage{url} +\usepackage{amssymb} +\DeclareSymbolFont{greek}{U}{eur}{m}{n} +\DeclareMathSymbol{\upmu}{\mathord}{greek}{"16} +\newcommand{\mus}{~\rm \upmu s} +\newcommand{\mum}{~\rm \upmu m} +\newcommand{\neqcm}{~\rm n_{eq}/cm^2} +\newcommand{\Mrad}{~\rm Mrad} +\newcommand{\krad}{~\rm krad} +\newcommand{\C}{~{}^{\circ}\rm C} +\newcommand{\e}{~\rm e} +%% +%% VARIABLE HEIGHT FOR THE TITLE BOX (default 35mm) +%% + +\setlength{\titleblockheight}{27mm} + +\begin{document} +\title{Noise performance of CMOS Monolithic Active Pixel Sensors using the $0.18\mum$ CMOS process\thanks{This work has been supported by the BMBF (06FY9099I and 06FY7113I), HGS-HIRe, HIC for FAIR and GSI.}} + +\author[1]{D. Doering} +\author[2]{J. Baudot} +\author[1]{M. Deveaux} +\author[2]{M. Goffe} +\author[2]{S. Senyukov} +\author[1]{J. Stroth} +\author[2]{M. Winter} +%\affil{Institut f\"ur Kernphysik, Goethe University Frankfurt, Germany and IPHC Strasbourg, France} +%\affil{IPHC Strasbourg, 23 Rue du Loess, 67037 Strasbourg, France} +\affil[1]{Institut f\"ur Kernphysik, Goethe University Frankfurt, Germany} +\affil[2]{IPHC Strasbourg, France} + +%\affil[mun]{Forschungsneutronenquelle Heinz-Maier-Leibnitz (FRM II), Technical University Munich, Lichtenbergstr. 1, +%85747 Garching, Germany} +\maketitle +\hbox{} +\hbox{ } + +%\section{Introduction} +\textbf{So far CMOS active pixel sensors (MAPS) matched the requirements of CBM in terms of spatial resolution and material budget. During several years, their radiation tolerance has been adapted to the needs of this experiment. In 2012, the radiation tolerance of a sensor, produced in an \mbox{0.18 $\upmu \rm m$} CMOS process was tested. It could be demonstrated that this sensor provides the radiation tolerance required for CBM at SIS-100. \newline} +In a first step, the tolerance of MAPS to non-ionizing radiation was improved by more than one order of magnitude. This was reached by partially depleting the active volume of the sensors \cite{DevMi26paper,DevMi26paper2}. Still, the tolerance of the sensors to ionizing radiation remained to be improved. This was done by migrating a simple imager sensor from the established \mbox{0.35 $\upmu \rm m$} process to an \mbox{0.18 $\upmu \rm m$} process. It was hoped that this would allow for exploiting the known higher intrinsic radiation tolerance of deep sub-micron CMOS processes. Besides providing benefits in terms of radiation tolerance, the \mbox{0.18 $\upmu \rm m$} process comes with additional features which are expected to allow for a better time resolution of the device.\newline +To explore the new technology, three different prototypes named MIMOSA-32 (V1-3) were designed by the PICSEL group of the IPHC and tested in the laboratory and at the CERN-SPS.\newline +Each flavor of MIMOSA-32 is composed of arrays of 32 different pixels with various parameters, which were put to study selected pixel parameters in a systematic way. +Increasing the surface of the transistor gate seems to reduce the relative impact of the RTS and is therefore found to be beneficial. This holds also for the gate of the reset transistor, which was enlarged in \mbox{Pixel D}. After this modification, the median noise was reduced from \mbox{$19.8~\rm e$} \mbox{(Pixel A)} to \mbox{$16.2~\rm e$} \mbox{(Pixel D)}. Note that, while enlarging the transistor size reduces the RTS, cooling seems not to show a positive impact. This is in contrast to our observations on RTS-noise originating from the pixel \mbox{diodes \cite{RTS}}. +We conclude MAPS manufactured in an \mbox{0.18 $\mu \rm m$} CMOS process combined with a high-resistivity epitaxial layer provide the radiation tolerance required by the micro-vertex-detector of CBM at SIS-100. Moreover, there are first evidences that the technology might also match the higher needs of CBM at SIS-300. While this conclusion appears robust for simple imagers, it remains to be confirmed for the more complex sensors with integrated data processing circuits. \newline + +\begin{table}[tbp] + +\centering +\begin{tabular}{|l|c|cc|ccc|c|} +\hline +Matrix& &Width &Length &Noise & Gain & Noise & Noise \\ + & &$[\mu m]$ &$[\mu m]$ &$ADU$ & $[e/ADU]$ & $[e]$& $99\%<[e]$\\ +\hline +%ELT & & 1.85 & 12.1 & 22.4\\ +Mi-32ter-P2& A & 1.5 & 0.2 & 1.81 & 11.1 & 19.8 & 41\\ +Mi-32ter-P6& B & 0.9 & 0.2 & 1.97 & 10.5 & 20.5 & 55\\ +Mi-32ter-P5& C & 0.5 & 0.2 & 2.09 & 10.1 & 21.3 & 63\\ +Mi-34-P17 & D & 1.5 & 0.2 & 2.83 & 5.8 & 16.2 & 38\\ +Mi-18AHR-A2 ($0.35~\upmu \rm m$)&R & - & 0.35 & 1.71 & 6.0 & 10.7 & 18\\ +\hline +Difference A$\rightarrow$C & & & & +15\% & +10\% & +8\% & +54\%\\ +\hline +\end{tabular} +\caption{Noise and gain in dependence of the source follower gate size. The uncertainties of the absolute measurements are 5\% for the gain and 10\% for the median noise. The diode size of all pixels listed is $11~\rm \upmu m^2$. The width of the gate of all reset transistors is $0.25~\rm \upmu m$ and the length is $0.20~\rm \upmu m$ (pixel A-C) and $0.30~\rm \upmu m$ (pixel D). The source follower transistor of pixel R has an enclosed layout. Note, the gain includes the gain of the external readout chain. Therefore, only the gain of pixels of the same chip can be compared.} +\label{tab:Mi32-1-f-noise-table} +\end{table} +%\section{The results of the annealing study} +%\section{Outlook} + +\bibliographystyle{plain} +\bibliography{Lit} + + + + +\end{document} diff --git a/Jahresbericht2013/JACoW-GSI-2010.cls b/Jahresbericht2013/JACoW-GSI-2010.cls new file mode 100644 index 0000000..06b05d6 --- /dev/null +++ b/Jahresbericht2013/JACoW-GSI-2010.cls @@ -0,0 +1,435 @@ +%% +%% This file has been developed as a common template for papers +%% destined for electronic production using Adobe Acrobat +%% software for Accelerator Conferences +%% +%% See the JACo Website for more information +%% +%% http://www.cern.ch/accelconf/ +%% + +% Special thanks to John Jowett and Michel Goossens from CERN and +% Martin Comyn at TRIUMF for their significant contributions to +% this class file over the period 1996 to 2000. +% John Poole +% March 2000 + + +% JAC2001.cls is a modified version of JAC2000.cls to produce indented +% first paragraphs after section, subsection and subsubsection headings. +% +% Martin Comyn April 2001 +% modified for GSI 11/2005 K. 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\protect\ \protect\Affilfont} +\setcounter{Maxaffil}{1} +\setlength{\affilsep}{0.3em} +\ExecuteOptions{aca4} %2010 +%\boldmath + +%----------------------------------------------------------------------- diff --git a/Jahresbericht2013/Lit.bib b/Jahresbericht2013/Lit.bib new file mode 100644 index 0000000..b324540 --- /dev/null +++ b/Jahresbericht2013/Lit.bib @@ -0,0 +1,66 @@ + @ARTICLE{maps1, + author = {De Masi, R. and others}, + title = {{Towards a 10 $\mu s$, thin and high resolution pixelated CMOS sensor system for future +vertex detectors}}, + journal = {Nucl. Instr. and Meth. A 2010~ }, + year = {2010}, + doi = {10.1016/j.nima.2010.06.339}, + note ={and references therein}, + } + @ARTICLE{maps3, + author = { Baudot, J. and others}, + title = {{First Test Results Of MIMOSA-26, A Fast CMOS Sensor With Integrated Zero +Suppression And Digitized Output}}, + journal = {IEEE NSS Conf. Rec.}, + year = {2009}, + } + @article{DevMi26paper2, + author = {M. Deveaux et al.}, +title = {Rad. tol. of a column parallel CMOS sensor with partially depleted sensitive volume}, +journal = "NIM A~", +volume = "583", +number = "1", +pages = "134 - 138", +year = {2010}, +%note = "Proceedings of the 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - RESMDD 2006", +%issn = "0168-9002", +%doi = "DOI: 10.1016/j.nima.2007.08.189", +%url = "http://www.sciencedirect.com/science/article/B6TJM-4PJ6GDY-B/2/50267698c310ed50f9eaccc0dc609bf2", +} +@ARTICLE{Vertex08, + author = {{Deveaux}, M. and others}, + title = "{Design considerations for the Micro Vertex Detector of the Compressed Baryonic Matter experiment}", + journal = {POS(VERTEX2008)028}, +} +@ARTICLE{DevMi26paper, +author = "Dorokhov, A. and others", +title = {{Imp. rad. tol. of MAPS using a depleted epi layer}}, +journal = "NIM A~", +volume = "624", +number = "2", +pages = "432-436", +year = "2010", +doi = "10.1016/j.nima.2010.03.124A", +} +@misc{DevPeking, + author = {M. Deveaux}, + title = {{Status of the MVD - Getting prepared for SIS-100}}, + note = {CBM Collaboration Meeting Beijing}, + year = {2011}, + +} +@INPROCEEDINGS{RTS0.18, +author={Martin-Gonthier, P. and Magnan, P.}, +booktitle={Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on}, +title={RTS noise impact in CMOS image sensors readout circuit}, +year={2009}, +pages={928-931}, +doi={10.1109/ICECS.2009.5410825},} + +@INPROCEEDINGS{RTS0.182, +author={Xinyang Wang and Rao, P.R. and Mierop, A. and Theuwissen, A. J P}, +booktitle={Electron Devices Meeting, 2006. IEDM '06. International}, +title={Random Telegraph Signal in CMOS Image Sensor Pixels}, +year={2006}, +pages={1-4}, +doi={10.1109/IEDM.2006.346973},} \ No newline at end of file